PICOSUN™ R-series ALD process tools publications


ECNU:

Yang Wang, Yawei Li, Ke Yu and Ziqiang Zhu, Controllable synthesis and field emission enhancement of Al2O3 coated In2O3 core–shell nanostructures J. Phys. D: Appl. Phys. 44 105301 (2011).

ETH Zürich:

T. Helbling, C. Hierold, C. Roman, L. Durrer, M. Mattmann, Long Term Investigations of Carbon Nanotube Transistors Encapsulated by Atomic-Layer-Deposited Al2O3 for Sensor Applications, Nanotechnology 20, 434010 (2009).

Max-Planck-Institute of Microstructure Physics:

Adriana Szeghalmi, Ernst Bernhard Kley and Mato Knez, Theoretical and Experimental Analysis of the Sensitivity of Guided Mode Resonance SensorsJ. Phys. Chem. C 2010, 114, 21150–21157.

Y. Wang, Y. Qin, A. Berger, E. Yau, C. He, L. Zhang, U. Gösele, M. Knez, and M. Steinhart, Nanoscopic Morphologies in Block Copolymer Nanorods as Templates for Atomic-Layer Deposition of Semiconductors, Adv. Mater., 21 (27), 2763 (2009).

A. Szeghalmi, S. Senz, M. Bretschneider, U. Gösele, and M. Knez, All Dielectric Hard X-ray Mirror by Atomic Layer Deposition, Appl. Phys. Lett. 94, 133111 (2009).

A. Szeghalmi, M. Helgert, R. Brunner, F. Heyroth, U. Gösele, and M. Knez, Atomic Layer Deposition of Al2O3 and TiO2 Multilayers for Applications as Bandpass Filters and Antireflection Coatings, Applied Optics, 48 (9), 1727 (2009).

Y. Qin, L. Liu, R. Yang, U. Gösele, and M. Knez, General Assembly Method for Linear Metal Nanoparticle Chains Embedded in Nanotubes, Nano Lett., 8 (10), 3221 (2008).

Y. Qin, S.-M. Lee, A. Pan, U. Gösele, and Mato Knez, Rayleigh-Instability-Induced Metal Nanoparticle Chains Encapsulated in Nanotubes Produced by Atomic Layer Deposition, Nano Lett., 8 (1), 114 (2008).

Moscow Institute of Physics and Technology:

Structural properties of the titanium dioxide thin films grown by atomic layer deposition at various numbers of reaction cycles
Applied Surface Science, In Press, Corrected Proof, Available online 30 June 2010
A.P. Alekhin, S.A. Gudkova, A.M. Markeev, A.S. Mitiaev, A.A. Sigarev, V.F. Toknova

Nagoya University:

Formation processes of Ge3N4 films by radical nitridation and their electrical properties
Thin Solid Films, Volume 518, Issue 6, Supplement 1, 1 January 2010, Pages S226-S230
Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima

Nanexa AB:

Investigations of surface coatings to reduce memory effect in plastic scintillator detectors used for radioxenon detection 
L. Bläckberg, A.Fay, I.Jögi, S.Biegalski, M.Boman, K.Elmgren, T.Fritioff, A.Johansson, L. Martensson, F.Nielsen, A.Ringbom, M.Rooth, H.Sjöstrand, and M.Klintenberg, Nuclear Instruments and Methods in Physics Research A 656, 84 (2011).

National Taiwan University:

Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition 
Ching-Shiang Peng, Wen-Yuan Chang, Yi-Hsuan Lee, Ming-Ho Lin, Frederick Chen, and Ming-Jinn Tsai, Electrochemical and Solid-State Letters 15 (4), H88-H90 (2012).

National Tsing Hua University:

Effect of Al Incorporation in the Thermal Stability of Atomic-Layer-Deposited HfO2 for Gate Dielectric Applications 
Yan-Kai Chiou, Che-Hao Chang, Chen-Chan Wang, Kun-Yu Lee, Tai-Bor Wu, Raynien Kwo, and Minghwei Honga, Journal of the Electrochemical Society 154 (4), G99-G102 (2007).

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National University of Singapore:

B. Liao, R. Stangl, T. Mueller, F. Lin, C. S. Bhatia, B. Hoex, The effect of light soaking on crystalline silicon surface passivation by atomic layer deposited Al2O3, Journal of Applied Physics 113, 024509 (2013).

NIMS:

M. Kimura, T. Nabatame, H. Yamada, A. Ohi, T. Chikyow and T. Ohishi, Role of Al atoms in (TaC)1-xAlx gate electrode on Vfb for HfO2 gate stack, Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials, Nagoya, 2011, pp893-894

NTT Basic Research Laboratories:

M. Kasu, H. Sato, K. Hirama, Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al2O3 Overlayer and its Electric Properties, Applied Physics Express 5 (2012) 025701

H. Irie, Y. Harada, H. Sugiyama, T. Akazaki, In0:75Ga0:25As Quantum Point Contacts Utilizing Wrap-Gate Geometry, Applied Physics Express 5 (2012) 024001

K. Suzuki, Y. Harada, F. Maeda, K. Onomitsu, T. Yamaguchi, K. Muraki, Gate Operation of InAs/AlGaSb Heterostructures with an Atomic-Layer-Deposited Insulating Layer, Applied Physics Express 4 (2011) 125702

Satoshi Sasaki, Kouta Tateno, Guoqiang Zhang, Henri Suominen, Yuichi Harada, Shiro Saito, Akira Fujiwara, Tetsuomi Sogawa, Koji Muraki, Encapsulated gate-all-around InAs nanowire field-effect transistors, to be published in Applied Physics Letters.

K. Suzuki, Y. Harada, K. Onomitsu, K. Muraki, Edge channel transport in the InAs/GaSb topological insulating phase, Phys. Rev. B87 (2013) 235311-6.

J. Burnett, T. Lindström, M. Oxborrow, Y. Harada, Y. Sekine, P. Meeson, A. Ya. Tzalenchuk, Slow noise processes in superconducting resonators, Phys. Rev. B87 (2013) R140501-5.

S. Tanabe, M. Takamura, Y. Harada, H. Kageshima, H. Hibino, Quantum Hall effect and carrier scattering in quasi-free-standing monolayer graphene, Appl. Phys. Exp. 5 (2012) 125101-3.

K. Hirama, H. Sato, Y. Harada, H. Yamamoto, M. Kazu, Diamond field-effect transistors with 1.3 A/mm drain current density by Al2O3 passivation layer, Jpn. J. Appl. Phys. 51 (2012) 090112-5.

N. Maeda, M. Hiroki, S. Sasaki, Y. Harada, High-temperature characteristics in normally off AlGaN/GaN heterostructure field-effect transistors with recessed-gate enhanced-barrier structures, Appl. Phys. Exp. 5 (2012) 084201-3.

K. Hirama, H. Sato, Y. Harada, H. Yamamoto, M. Kazu, Thermally stable operation of H-terminated diamond FETs by NO2 adsorption and Al2O3 passivation, IEEE Electr. Device Lett. 33 (2012) 1111-1113.

Y-S. Shin, R. Brunner, A. Shibatomi, T. Obata, T. Otsuka, J. Yoneda, Y. Shiraki, K. Sawano, Y. Tokura, Y. Harada, K. Ishibashi, S. Tarucha,Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems, Semicond. Sci. Technol. 26 (2011) 055004-3. 

Oregon State University:

Atomic layer deposited high-k nanolaminate capacitors
Solid-State Electronics, Volume 54, Issue 10, October 2010, Pages 1076-1082
S.W. Smith, K.G. McAuliffe, J.F. Conley Jr.

 
Paul Scherrer Institut:

Vila-Comamala, K. Jefimovs, J. Raabe, T. Pilvi, R. H. Fink, M. Senoner, A. Maaßdorf, M. Ritala, and Christian David, Advanced Thin Film Technology for Ultrahigh Resolution X-ray Microscopy, Ultramicroscopy 109, 1360 (2009).

K. Jefimovs, J. Vila-Comamala, T. Pilvi, J. Raabe, M. Ritala, and C. David, Zone-Doubling Technique to Produce Ultrahigh-Resolution X-Ray Optics, Phys. Rev. Lett. 99 (26), 264801 (2007).

Picosun & VTT:

T. Hirvikorpi, R. Laine, M. Vähä-Nissi, V. Kilpi, E. Salo, W-M. Li, S. Lindfors, J. Vartiainen, E. Kenttä, J. Nikkola, A. Harlin, and J. Kostamo,Barrier properties of plastic films coated with an Al2O3 layer by roll-to-roll atomic layer deposition, Thin Solid Films 550, 164 (2014).

Technische Universität München:

D. Rüffer, R. Huber, P. Berberich, S. Albert, E. Russo-Averchi, M. Heiss, J. Arbiol, A. Fontcuberta i Morral, and D. Grundler, Magnetic states of an individual Ni nanotube probed by anisotropic magnetoresistance, Nanoscale, 4, 4989 (2012).

The University of Texas at Dallas:

C.L. Hinkle, E.M. Vogel, P.D. Ye, R.M. Wallace, Interfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applicationsi, Current Opinion in Solid State and Materials Science 15 (2011) 188–207.

B. Brennan, H. Dong, D. Zhernokletov, J. Kim, and R. M.Wallace, Surface and interface reaction study of half cycle atomic layer deposited Al2O3on chemically treated InP surfaces, Applied Physics Express, 4, 125701 (2011) .

P. Sivasubramani, T.J. Park, B. E. Coss, A. Lucero, J. Huang, B. Brennan, Y. Cao, D. Jena, H. Xing, R.M. Wallace, and J. Kim, In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O3-oxidized GaN substrates, Physica Status Solidi Rapid Research Letters, (In press) (2011).

M. Milojevic, R. Contreras-Guerrero, E. O’Connor, B. Brennan, P. K. Hurley, J. Kim, C. L. Hinkle, and R. M. Wallace, In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition, Applied Physics Letters, 99, 042904 (2011).

S. McDonnell, D.M. Zhernokletov, A.P. Kirk, J. Kim and R.M. Wallace In situ X-ray photoelectron spectroscopy characterization of Al2O3/GaSb interface evolution, Applied Surface Science, 257, 8747 (2011).

W. Wang, C.L. Hinkle, E.M. Vogel, K. Cho, R.M. Wallace, Is interfacial chemistry correlated to gap states for high-k/III–V interfaces?, Microelectronic Engineering 88, 1061 (2011).

É. O’Connor, B. Brennan, V. Djara, K. Cherkaoui, S. Monaghan, S. B. Newcomb, R.Contreras, M. Milojevic, G. Hughes, M. E. Pemble, R. M. Wallace, and P.K. Hurley, A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47-As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers, Journal of Applied Physics, 109, 024101 (2011).

B. Brennan, M.Milojevic, C.L.Hinkle, F.S.Aguirre-Tostado, G.Hughes, and R.M.Wallace, Optimisation of the ammonium sulphide(NH4)2S passivation process on In0.53Ga0.47As, Applied Surface Science, 257, 4028 (2011).

T.J. Park, P. Sivasubramani, B. E. Coss, H.-C. Kim, B. Lee, R. M. Wallace, J. Kim, M.Rousseau, X. Liu, H. Li, J. S. Lehn, D. Hong, and D. Shenai,Effects of O3 and H2O oxidants on C and N-related impurities in atomic layer-deposited La2O3 films observed by in situ x-ray photoelectron spectroscopy, Applied Physics Letters97, 092904 (2010).

A. Pirkle, S. McDonnell, B. Lee, J. Kim, L. Colombo and R. M. Wallace, The effect of graphite surface condition on the composition of Al2O3by atomic layer deposition, Applied Physics Letters 97, 082901 (2010).

B. Lee, G. Mordi, M. J. Kim, Y. J. Chabal, E. M. Vogel, R. M. Wallace, K. J. Cho, L. Colombo and J. Kim, Characteristics of High-k Al2O3 Dielectric Using Ozone-Based Atomic Layer Deposition for Dual-Gated Graphene Devices, Applied Physics Letters 97, 043107 (2010).

A. P. Kirk, M. Milojevic, J. Kim, and R. M. Wallace, An in situ examination of atomic layer deposited alumina/InAs(100) interfaces, Applied Physics Letters 96, 202905 (2010).

T.J. Park, K.J. Chung, H-C.l Kim, J. Ahn, R. M. Wallace, and J. Kim, Reduced Metal Contamination in Atomic-Layer-Deposited HfO2 Films Grown on Si Using O3 Oxidant Generated Without N2 Assistance, Electrochemical and Solid State Letters 13, G65 (2010).

M.Milojevic, A.M.Sonnet, C.L.Hinkle, H.C.Kim, E.M.Vogel, J. Kim, and R.M.Wallace, In-situ studies of atomic layer deposition studies on high-mobility channel materials , ECS Transactions, 25 (4) 115-122 (2009).

M. Xu, K. Xu, R. Contreras, M. Milojevic, T. Shen, O. Koybasi, Y.Q. Wu, R.M. Wallace, and P. D. Ye, New Insight into Fermi-Level Unpinning on GaAs: Impact of Different Surface Orientations , (2009).

Robert M. Wallace, Paul C. McIntyre, Jiyoung Kim, and Yoshio Nishi, Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors, MRS Bulletin, Volume 34, July 2009.

M. Milojevic, R. Contreras-Guerrero, M. Lopez-Lopez, J. Kim and R. M. Wallace, Characterization of the “clean-up” of the oxidized Ge(100) surface by atomic layer deposition, Applied Physics Letters 95, 212902 (2009).

C. L. Hinkle, M. Milojevic, E. M. Vogel, and R. M. Wallace, The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding, Applied Physics Letters 95, 151905 (2009).

A. Pirkle, L.Colombo and R.M.Wallace, In-situ Studies of Al2O3 and HfO2Dielectrics on Graphite, Applied Physics Letters 95, 133106 (2009).

B. Brennan, M. Milojevic, H. C. Kim, P. K. Hurley, J. Kim, G. Hughes, and R. M. Wallace, Half-Cycle Atomic Layer Deposition Reaction Study Using O3 and H2O Oxidation of Al2O3on In0.53Ga0.47As, Electrochemical and Solid State Letters12(6) H205 (2009).

C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, F. S. Aguirre-Tostado, G. J. Hughes, E. M. Vogel, and R. M. Wallace, Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning, Applied Physics Letters 94, 162101 (2009).

B. Lee, T.J. Park, A. Hande, M.J. Kim, R.M. Wallace, J. Kim, X. Liu, J. Yi, M. Rousseau , D. Shenai, J. Suydam, Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone, Microelectronic Engineering 86 (7-9) 1658 (2009).

C.L. Hinkle, M. Milojevic, E.M. Vogel and R.M. Wallace, Surface passivation and implications on high mobility channel performance, Microelectronic Engineering 86 (7-9) 1544 (2009) (Invited).

A. Pirkle, Y. J. Chabal, L. Colombo, and R. M. Wallace, In-situ Studies of High-? Dielectrics for Graphene-Based Devices, Electrochemical Society Transactions 19(5), 215 (2009).

C. L. Hinkle, M. Milojevic, A. M. Sonnet, H. C. Kim, J. Kim, E. M. Vogel, and R. M. Wallace, Surface studies of III-V materials: oxidation control and device implications, Electrochemical Society Transactions 19(5), 387 (2009).

R.M. Wallace, In-Situ Studies of Interfacial Bonding of High-k Dielectrics for CMOS Beyond 22nm, ECS Transactions, 16 (5) 255-271 (2008).

M. Milojevic, C. L. Hinkle, F. S. Aguirre-Tostado, H. C. Kim, E. M. Vogel, J. Kim, and R. M. Wallace, Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces, Applied Physics Letters 93, 252905 (2008).

M. Milojevic, F. S. Aguirre-Tostado, C. L. Hinkle, H. C. Kim, E. M. Vogel, J. Kim, and R. M. Wallace, Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As(100) surfaces, Applied Physics Letters 93, 202902 (2008).

F. S. Aguirre-Tostado, M. Milojevic, B. Lee, J. Kim, and R. M. Wallace, In situ study of surface reactions of atomic layer deposited LaxAl2-xO3 films on atomically clean In0.2Ga0.8As, Applied Physics Letters 93, 172907 (2008).

C. L. Hinkle, A. M. Sonnet, M. Milojevic, F. S. Aguirre-Tostado, H. C. Kim, J. Kim, R. M. Wallace, and E. M. Vogel, Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics, Applied Physics Letters 93, 113506 (2008).

F. S. Aguirre-Tostado, M. Milojevic, K. J. Choi, H. C. Kim, C. L. Hinkle, E. M. Vogel, J. Kim, T. Yang, Y. Xuan, P. D. Ye, and R. M. Wallace, S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates, Applied Physics Letters 93, 061907 (2008).

C. L. Hinkle, A. M. Sonnet, M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, and R. M. Wallace, GaAs Interfacial Self-Cleaning by Atomic Layer Deposition, Appl. Phys. Lett. 92, 071901 (2008).

Stephen McDonnell, Barry Brennan, Angelica Azcatl, Ning Lu, Hong Dong, Creighton Buie, Jiyoung Kim, Christopher L. Hinkle, Moon J. Kim, and Robert M. Wallace, HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability

D. M. Zhernokletov, H. Dong, B. Brennan, M. Yakimov, V. Tokranov, Surface and interfacial reaction study of half cycle atomic layer deposited fO2 on chemically treated GaSb surfaces , Appl. Phys. Lett. 102, 131602 (2013).

H. Dong, B. Brennan, D. Zhernokletov, J. Kim, C. L. Hinkle, In situ study of HfO2 atomic layer deposition on InP(100), Appl. Phys. Lett.102, 171602 (2013).

H. Dong, W. Cabrera, R. V. Galatage, Santosh KC, B. Brennan, Indium diffusion through high-k dielectrics in high-k/InP stacks, Appl. Phys. Lett. 103, 061601 (2013).

H. Dong, B. Brennan, X. Qin, D. M. Zhernokletov, C. L. Hinkle, In situ study of atomic layer deposition Al2O3 on GaP (100), Appl. Phys. Lett. 103, 121604 (2013).

Xiaoye Qin, Barry Brennan, Hong Dong, Jiyoung Kim, Christopher L. Hinkle, In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N, J. Appl. Phys. 113, 244102 (2013).

B. Brennan, R. V. Galatage, K. Thomas, E. Pelucchi, P. K. Hurley, Chemical and electrical characterization of the HfO2/InAlAs interface,
J. Appl. Phys. 114, 104103 (2013).

H. Dong, Santosh, K.C., X. Qin, B. Brennan, S. McDonnell, D. Zhernokletov, C. L. Hinkle, J. Kim, K. Cho, and R.M. Wallace, In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP, Journal of Applied Physics 114, 154105 (2013). 

Tohoku University:

M. Kohda, J. Takagi, and J. Nitta, Comparison of Gate Sensitivity for Spin Interference Effect between Al2O3 and SiO2 Gate Insulators on InGaAs Based Mesoscopic Ring Arrays, ECS Transactions 16 (4), 39 (2008).

University of Helsinki:

E. Härkönen, B. Díaz, J. Swiatowska, V. Maurice, A. Seyeux, M. Vehkamäki, T. Sajavaara, M. Fenker, P. Marcus, and M. Ritala, Corrosion Protection of Steel with Oxide Nanolaminates Grown by Atomic Layer Deposition, Journal of The Electrochemical Society, 158 (11) C369-C378 (2011).

Noble metal-modified TiO2 thin film photocatalyst on porous steel fiber support
Applied Catalysis B: Environmental, Volume 95, Issues 3-4, 6 April 2010, Pages 358-364
Hongfan Guo, Marianna Kemell, Mikko Heikkilä, Markku Leskelä

M. Kemell, E. Härkönen, V. Pore, M. Ritala, and M. Leskelä, Ta2O5- and TiO2-Based Nanostructures Made by Atomic Layer Deposition, Nanotechnology 21, 035301 (2010).

M. Kemell, M. Ritala, M. Leskelä, R. Groenen, and S. Lindfors, Coating of Highly Porous Fiber Matrices by Atomic Layer Deposition, Chem. Vap. Deposition 14, 347 (2008).

T. Pilvi, M. Kemell, T. Hatanpää, H. Su, J. Pearson, S. Nenonen, M. Leskelä, and M. Ritala, ALD of Ir on Microchannel Plates for X-ray Optic Applications, Presented at AVS 7th International Conference on Atomic Layer Deposition, San Diego, USA, June 24-27, 2007.

M. Ritala, M. Kemell, M. Lautala, A. Niskanen, M. Leskelä, and S. Lindfors, Rapid Coating of Through-Porous Substrates by Atomic Layer Deposition, Chem. Vap. Deposition 12, 655 (2006).

VTT Technical Research Centre of Finland:

T. Hirvikorpi, M. Vähä-Nissi, A. Harlin, M. Salomäki, S. Areva, J. T. Korhonen, M. Karppinen, Applied Surface Science 257, 9451 (2011)

T. Hirvikorpi, M. Vähä-Nissi, J. Nikkola, A. Harlin, M. Karppinen, Surface & Coatings Technology 205, 5088 (2011)

T. Hirvikorpi, M. Vähä-Nissi, J. Vartiainen, P. Penttilä, J. Nikkola, A. Harlin, R. Serimaa, M. Karppinen, Journal of Applied Polymer Science122, 2221 (2011)

T. Hirvikorpi, M. Vähä-Nissi, A. Harlin, J. Marles, V. Miikkulainen, M. Karppinen, Applied Surface Science 257, 736 (2010)

R. L. Puurunen, M. Blomberg, and H. Kattelus, ALD Layers in MEMS Fabrication, Presented at AVS 9th International Conference on Atomic Layer Deposition, Monterey, California, USA, July 19-22, 2009.

R. L. Puurunen, and H. Kattelus, ALD ATO Nanolaminates with Adjustable Electrical Properties, Presented at AVS 9th International Conference on Atomic Layer Deposition, Monterey, California, USA, July 19-22, 2009.

S. Sirviö, R.L. Puurunen, and H. Kattelus, Electrical Properties of Capacitors with ALD-Grown Al2O3 and Al2O3-TiO2 Nanolaminate Thin Film Dielectric Layers, Presented at AVS 8th International Conference on Atomic Layer Deposition, Bruges, Belgium, June 29 – July 2, 2008.

R. L. Puurunen, J. Saarilahti, and H. Kattelus, Implementing ALD Layers in MEMS Processing, ECS Transactions 11 (7), 3 (2007).

R. L. Puurunen, H. Kattelus, J. Saarilahti, K. Solehmainen, S. Lindfors, and P. J. Soininen, Al2O3-TiO2 Nanolaminates for MEMS and Optical Applications: Combining the Trimethylaluminum/Water and Titanium tetrachloride/Water ALD Processes, Presented at AVS 7th International Conference on Atomic Layer Deposition, San Diego, USA, June 24-27, 2007.

J. Kyynarainen, J. Saarilahti, H. Kattelus, T. Meinander, M. Suhonen, A. Oja, H. Seppä, P. Pekko, H. Kuisma, S. Ruotsalainen, and M. Tilli, 3D Micromechanical Compass, Sensor Letters 5 (1), 126 (2007).

J. Dekker, K. Kolari, and R. L. Puurunen, Inductively Coupled Plasma Etching of Amorphous Al2O3and TiO2 Mask Layers Grown by Atomic Layer Deposition, J. Vac. Sci. Technol. B 24 (5), 2350 (2006).

V. Miikkulainen, M. Leskelä, M. Ritala, and R. L. Puurunen, Crystallinity of Inorganic Films Grown by Atomic Layer Deposition: Overview and General Trends, Appl. Phys. Rev., in press (version 14.9.2012) 

Wayne State University:

M. J. Saly, F. Munnik, R. J. Baird, and C. H. Winter, Atomic Layer Deposition Growth of BaB2O4 Thin Films from an Exceptionally Thermally Stable Tris(pyrazolyl)borate-Based Precursor, Chem. Mater. 21 (16), 3742 (2009).