PICOPLASMA™ source system

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Picosun's innovative PICOPLASMA™ plasma enhanced ALD (PEALD) source system is based on highly advanced, ion-free remote plasma source, proven by top research customers on three continents. Various excited species such as oxygen, nitrogen and hydrogen radicals with zero charge can be generated to broaden the range of ALD process chemistries – especially metal and metal nitride thin films can be deposited at low temperatures with activated species – and the remote source enables processing of the most sensitive substrates and delicate device structures without plasma damage due to very low ion count but still high reactive species flux.

PICOPLASMA™ source system can be mounted on existing PICOSUN™ ALD reactors or the whole PEALD system can be installed as one compact, small footprint deposition unit of easy implementation, quick maintenance and low cost of ownership. The system can also be fully automated by integrating it into the PICOPLATFORM™ cluster tool with cassette-to-cassette loading via a vacuum load lock. Fast matching and stable power delivery of the plasma unit enable high yields with fast process speed and excellent film uniformity (thickness STD 0.7 % with Al2O3 and AlN on silicon, deposited from TMA and oxygen radicals) and good conformality in deep trenches up to AR of 48:1 for oxygen plasma processes and 25:1 for nitrogen/hydrogen plasma processes. In short, the novel PICOPLASMA™ tool increases the already top level versatility, customizability and upscalability of Picosun's existing ALD systems.