R-200 Advanced

Basic features

 
Substrate size and type 50 – 200 mm single wafers
Wafer minibatch up to 150 mm
156 mm x 156 mm solar Si wafers
3D objects
Powders and particles
Through-porous and HAR samples
   
Process temperature 50 – 500 °C, higher on request
   
Substrate loading options Pneumatic lift (manual loading)
Load lock with magnetic manipulator arm
Semi-automatic loading with handling robot
Cassette-to-cassette loading with cluster tools
   
Precursors Liquid, solid, gas, ozone, plasma
Up to 12 sources with 6 separate inlets

Measures

 
Weight 350 + 200 kg
   
Dimensions (W x H x D) Depending on options
Minimum 146 cm x 146 cm x 84 cm
Maximum 189 cm x 206 cm x 111 cm

Utilities

 
Power supply 400 VAC, 3 phase with N or 200-210V 3 phase, 50/60 Hz
Fuse 3 x 16 Amps
Power depending on options
   
Vacuum pump Recommendation min. 100 – 420 m3/h, mechanical particle trap
   
Carrier gas 99.999 % N2 / Ar, min 2 slm
   
Compressed dry air 4 – 5.5 bar overpressure
   
Cooling water Only required for dry vacuum pump and plasma generator, not for the reactor
   
Exhausts Vacuum pump, source cabinets

Options

 
PICOFLOW™ diffusion enhancer, QCM, RGA, UHV compatibility, N2 generator, gas scrubber, customized designs