R-200 StandardBasic features |
|
| Substrate size and type | 50 – 200 mm single wafers Wafer minibatch up to 150 mm 156 mm x 156 mm solar Si wafers 3D objects Powders and particles Through-porous and HAR samples |
| Process temperature | 50 – 500 °C, higher on request |
| Substrate loading options | Pneumatic lift (manual loading) Load lock with magnetic manipulator arm |
| Precursors | Liquid, solid, gas, ozone Up to 6 sources with 4 separate inlets |
Measures |
|
| Weight | 350 kg |
| Dimensions (W x H x D) | Depending on options Minimum 146 cm x 146 cm x 84 cm Maximum 189 cm x 206 cm x 111 cm |
Utilities |
|
| Power supply | 200-240 VAC, 1-phase, 50/60 Hz Fuse 1 x 16 Amps Power depending on options |
| Vacuum pump | Recommendation min. 100 – 420 m3/h, mechanical particle trap |
| Carrier gas | 99.999 % N2 / Ar, min 2 slm |
| Compressed dry air | 4 – 5.5 bar overpressure |
| Cooling water | Only required for dry vacuum pump, not for the reactor |
| Exhausts | Vacuum pump, process enclosure |
Options |
|
| PICOFLOW™ diffusion enhancer, QCM, RGA, N2 generator, gas scrubber, customized designs |