SUNALE™ R-series ALD process tools publications
ETH Zürich :
T. Helbling, C. Hierold, C. Roman, L. Durrer, M. Mattmann, Long Term Investigations of Carbon Nanotube Transistors Encapsulated by Atomic-Layer-Deposited Al2O3 for Sensor Applications, Nanotechnology 20, 434010 (2009).
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Max-Planck-Institute of Microstructure Physics:
Y. Wang, Y. Qin, A. Berger, E. Yau, C. He, L. Zhang, U. Gösele, M. Knez, and M. Steinhart, Nanoscopic Morphologies in Block Copolymer Nanorods as Templates for Atomic-Layer Deposition of Semiconductors, Adv. Mater., 21 (27), 2763 (2009).
A. Szeghalmi, S. Senz, M. Bretschneider, U. Gösele, and M. Knez, All Dielectric Hard X-ray Mirror by Atomic Layer Deposition, Appl. Phys. Lett. 94, 133111 (2009).
A. Szeghalmi, M. Helgert, R. Brunner, F. Heyroth, U. Gösele, and M. Knez, Atomic Layer Deposition of Al2O3 and TiO2 Multilayers for Applications as Bandpass Filters and Antireflection Coatings, Applied Optics, 48 (9), 1727 (2009).
Y. Qin, L. Liu, R. Yang, U. Gösele, and M. Knez, General Assembly Method for Linear Metal Nanoparticle Chains Embedded in Nanotubes, Nano Lett., 8 (10), 3221 (2008).
Y. Qin, S.-M. Lee, A. Pan, U. Gösele, and Mato Knez, Rayleigh-Instability-Induced Metal Nanoparticle Chains Encapsulated in Nanotubes Produced by Atomic Layer Deposition, Nano Lett., 8 (1), 114 (2008).
Paul Scherrer Institut:
Vila-Comamala, K. Jefimovs, J. Raabe, T. Pilvi, R. H. Fink, M. Senoner, A. Maaßdorf, M. Ritala, and Christian David, Advanced Thin Film Technology for Ultrahigh Resolution X-ray Microscopy, Ultramicroscopy 109, 1360 (2009).
K. Jefimovs, J. Vila-Comamala, T. Pilvi, J. Raabe, M. Ritala, and C. David, Zone-Doubling Technique to Produce Ultrahigh-Resolution X-Ray Optics, Phys. Rev. Lett. 99 (26), 264801 (2007).
Picosun:
J. Kostamo, S. Lindfors, and K.-E. Elers, Novel Batch ALD Reactor Design for Advanced Microelectronics and Nanotechnology Manufacturing, Presented at AVS 8th International Conference on Atomic Layer Deposition, Bruges, Belgium, June 29 – July 2, 2008.
T. Suntola, ALD for Advanced Semiconductor and Nanotechnology Manufacturing, Presented at Nanotech in Russia: Development of Nanotechnologies and Nanomaterials Conference, Helsinki, Finland, Sep 12-13, 2007.
S. Lindfors, P. J. Soininen, and K.-E. Elers, Automated Handling of Substrates in an ALD Reactor, Presented at AVS 7th International Conference on Atomic Layer Deposition, San Diego, USA, June 24-27, 2007.
S. Lindfors, P. J. Soininen, and J. Kostamo, Advanced ALD Reactor with Heated Precursor Source and Substrate Handler, Presented at AVS 6th International Conference on Atomic Layer Deposition, Seoul, Korea, July 24-26, 2006.
Tohoku University:
M. Kohda, J. Takagi, and J. Nitta, Comparison of Gate Sensitivity for Spin Interference Effect between Al2O3 and SiO2 Gate Insulators on InGaAs Based Mesoscopic Ring Arrays, ECS Transactions 16 (4), 39 (2008).
University of Helsinki:
M. Kemell, E. Härkönen, V. Pore, M. Ritala, and M. Leskelä, Ta2O5- and TiO2-Based Nanostructures Made by Atomic Layer Deposition, Nanotechnology 21, 035301 (2010).
M. Kemell, M. Ritala, M. Leskelä, R. Groenen, and S. Lindfors, Coating of Highly Porous Fiber Matrices by Atomic Layer Deposition, Chem. Vap. Deposition 14, 347 (2008).
T. Pilvi, M. Kemell, T. Hatanpää, H. Su, J. Pearson, S. Nenonen, M. Leskelä, and M. Ritala, ALD of Ir on Microchannel Plates for X-ray Optic Applications, Presented at AVS 7th International Conference on Atomic Layer Deposition, San Diego, USA, June 24-27, 2007.
M. Ritala, M. Kemell, M. Lautala, A. Niskanen, M. Leskelä, and S. Lindfors, Rapid Coating of Through-Porous Substrates by Atomic Layer Deposition, Chem. Vap. Deposition 12, 655 (2006).
The University of Texas at Dallas:
C. L. Hinkle, A. M. Sonnet, M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, and R. M. Wallace, GaAs Interfacial Self-Cleaning by Atomic Layer Deposition, Appl. Phys. Lett. 92, 071901 (2008).
VTT Technical Research Centre of Finland:
R. L. Puurunen, M. Blomberg, and H. Kattelus, ALD Layers in MEMS Fabrication, Presented at AVS 9th International Conference on Atomic Layer Deposition, Monterey, California, USA, July 19-22, 2009.
R. L. Puurunen, and H. Kattelus, ALD ATO Nanolaminates with Adjustable Electrical Properties, Presented at AVS 9th International Conference on Atomic Layer Deposition, Monterey, California, USA, July 19-22, 2009.
S. Sirviö, R.L. Puurunen, and H. Kattelus, Electrical Properties of Capacitors with ALD-Grown Al2O3 and Al2O3-TiO2 Nanolaminate Thin Film Dielectric Layers, Presented at AVS 8th International Conference on Atomic Layer Deposition, Bruges, Belgium, June 29 – July 2, 2008.
R. L. Puurunen, J. Saarilahti, and H. Kattelus, Implementing ALD Layers in MEMS Processing, ECS Transactions 11 (7), 3 (2007).
R. L. Puurunen, H. Kattelus, J. Saarilahti, K. Solehmainen, S. Lindfors, and P. J. Soininen, Al2O3-TiO2 Nanolaminates for MEMS and Optical Applications: Combining the Trimethylaluminum/Water and Titanium tetrachloride/Water ALD Processes, Presented at AVS 7th International Conference on Atomic Layer Deposition, San Diego, USA, June 24-27, 2007.
J. Kyynarainen, J. Saarilahti, H. Kattelus, T. Meinander, M. Suhonen, A. Oja, H. Seppä, P. Pekko, H. Kuisma, S. Ruotsalainen, and M. Tilli, 3D Micromechanical Compass, Sensor Letters 5 (1), 126 (2007).
J. Dekker, K. Kolari, and R. L. Puurunen, Inductively Coupled Plasma Etching of Amorphous Al2O3 and TiO2 Mask Layers Grown by Atomic Layer Deposition, J. Vac. Sci. Technol. B 24 (5), 2350 (2006).
Wayne State University:
M. J. Saly, F. Munnik, R. J. Baird, and C. H. Winter, Atomic Layer Deposition Growth of BaB2O4 Thin Films from an Exceptionally Thermally Stable Tris(pyrazolyl)borate-Based Precursor, Chem. Mater. 21 (16), 3742 (2009).
